Influence of Post-Annealing on Resistivity of VOx Thin Film

被引：9

作者：

Chen, Rong-Hong ^{[1
]}

Jiang, Yu-Long ^{[1
]}

Li, Bing-Zong ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 07期

关键词：

Vanadium oxide; nanocrystal; temperature coefficient of resistance; post-annealing;

D O I：

10.1109/LED.2014.2326691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of post-annealing (PA) on the resistivity of 55-nm VOx film (similar to 1.2 Omega . cm) is investigated in this letter. For the first time, it is demonstrated that PA can effectively lower the film resistivity but with a constant temperature coefficient of resistance (TCR) by enhancing the formation of embedded VO2 nanocrystals (NCs), while keeping the VOx film composition unchanged. A model based on charge hopping between VO2 NCs is proposed to illustrate the relationship between the temperature-dependent resistivity and the constant TCR.

引用

页码：780 / 782

页数：3

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