Kinetics of the heteroepitaxial growth of Ge on Si(001)

被引：13

作者：

Yam, V ^{[1
]}

Le Thanh, V ^{[1
]}

Boucaud, P ^{[1
]}

Débarre, D ^{[1
]}

Bouchier, D ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.1473177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The kinetics of the growth mode transition from two-dimensional to islanding growth during Ge/ Si(001) heteroepitaxy have been investigated by a combination of in situ reflection high-energy electron diffraction, atomic force microscopy, and photoluminescence spectroscopy. It is found that the two-dimensional wetting layers undergo a morphological instability well before reaching the critical thickness. The layer instability appears to be strain driven and gives rise locally to the formation of intermediate clusters between the wetting layers and macroscopic islands. We provide evidence that such intermediate clusters are metastable both in view of structural and optical properties. (C) 2002 American Vacuum Society.

引用

页码：1251 / 1258

页数：8

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