Preparation, structure, and luminescence properties of Y2Si4N6C:Ce3+ and Y2Si4N6C:Tb3+

被引：20

作者：

Zhang, Hongchuan ^{[1
]}

Horikawa, Takashi ^{[1
]}

Machida, Ken-ichi ^{[1
]}

机构：

[1] Osaka Univ, Ctr Adv Sci & Innovat, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 07期

关键词：

D O I：

10.1149/1.2203101

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Rare-earth silicon carbonitrides, Y2Si4N6C and Y2Si4N6C:M3+ (M = Ce, Tb), were prepared by a carbothermal reduction and nitridation method. The crystal structure of Y2Si4N6C was determined by Rietveld refinement using the atomic coordinates of Ho2Si4N6C as a starting model. The host lattice was isostructural with Ho2Si4N6C of monoclinic system [P21/c, a = 5.9295(1), b = 9.8957(1), c = 11.8800(2) angstrom, beta = 119.63(4)degrees, and Z = 4]. The photoluminescence properties of doped materials, Y2Si4N6C:Ce3+ and Y2Si4N6C:Tb3+, were characterized on the basis of the detailed structural analysis result. (c) 2006 The Electrochemical Society.

引用

页码：H151 / H154

页数：4

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