Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge

被引：16

作者：

Icelli, Orhan ^{[1
]}

机构：

[1] Erzincan Univ, Dept Phys Educ, Fac Educ, Erzincan, Turkey

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 600卷 / 03期

关键词：

Mass attenuation coefficients; Semiconductors; Effective atomic number; Transmission method; MASS ATTENUATION COEFFICIENTS; ESSENTIAL AMINO-ACIDS; OPTICAL-PROPERTIES; CROSS-SECTIONS; COMPTON-SCATTERING; PHOTON INTERACTION; BORON-COMPOUNDS; GROWTH; ENERGIES; ALLOYS;

D O I：

10.1016/j.nima.2008.12.144

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmiurn(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXConn being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：635 / 639

页数：5

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