SiGe bipolar 5.5GHz dual-modulus prescaler

被引：5

作者：

Klepser, BU ^{[1
]}

机构：

[1] Infineon Technol, D-81541 Munich, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 20期

关键词：

D O I：

10.1049/el:19991158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SiGe bipolar dual-modulus divided by 64/65, divided by 32/33 prescaler implemented in commercially available Infineon SiGe bipolar technology is presented. A maximum operational frequency of 5.5GHz has been measured for a supply current of 6mA at 3.3V. For a reduced supply current of 3.5mA, a maximum frequency of 4.0GHz has been obtained. A comparison with a purely-Si prescaler clearly demonstrates thr enhanced speed-power product of the SiGe technology.

引用

页码：1728 / 1730

页数：3