70 W GaN-HEMT Ku-Band Power Amplifier in MIC Technology

被引：23

作者：

Maassen, Daniel ^{[1
]}

Rautschke, Felix ^{[1
]}

Ohnimus, Florian ^{[2
]}

Schenk, Lothar ^{[2
]}

Dalisda, Uwe ^{[2
]}

Boeck, Georg ^{[1
,3
]}

机构：

[1] Berlin Inst Technol, Dept Microwave Engn, D-10587 Berlin, Germany

[2] Rohde & Schwarz GmbH & Co KG, D-12489 Berlin, Germany

[3] Leibniz Inst Fuer Hoechstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2017年 / 65卷 / 04期

关键词：

GaN; HEMTs; microwave circuits; power amplifiers (PAs); predistortion linearizers; satellite communications;

D O I：

10.1109/TMTT.2016.2636151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the design, implementation, and experimental results of a Ku-band 70 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A two-stage design approach with two 250 nm bare-die devices has been chosen to achieve a considerably high saturated gain of 15 dB over the whole extended Ku-band (13.75-14.5 GHz). The circuit was realized in a hybrid microwave integrated circuit technology on an alumina substrate. The PA shows a measured performance of more than 50 W output power for a continuous-wave signal with a power-added efficiency (PAE) higher than 23%. Modulated measurements demonstrate an average output power of more than 30 W (70W peak) and 21% PAE, while holding the Eutelsat linearity requirements.

引用

页码：1272 / 1283

页数：12

共 25 条

[1]

[Anonymous], 2004, EUT EARTH STAT STAND

[2]

[Anonymous], 2015, CAMPA1D1E025F PREL D

[3]

[Anonymous], 2006, RF power amplifiers for wireless communications

[4]

Calvillo-Cortese DA, 2011, EUR MICROW CONF, P103

[5]

Colantonio Paolo., 2009, High Efficiency RF and Mircowave Solid State Power Amplifiers

[6]

Cree Inc. Durham NC USA, 2012, CGHV1J070D DAT

[7]

Dellier S., 2012, P IEEE 1 AESS EUR C, P1

[8]

Fano R. M., 1950, Journal of the Franklin Institute, V249, P57, DOI [10.1016/0016-0032(50)90006-8, DOI 10.1016/0016-0032(50)90006-8]

[9] 40 dBm AlGaN/GaN HEMT Power Amplifier MMIC for SatCom Applications at K-Band [J].

Friesicke, C. ;

Feuerschuetz, P. ;

Quay, R. ;

Ambacher, O. ;

Jacob, A. F. .

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,

[10] A Design Approach for Two Stages GaN MMIC PAs With High Efficiency and Excellent Linearity [J].

Giofre, Rocco ;

Colantonio, Paolo ;

Giannini, Franco .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (01) :46-48

← 1 2 3 →