Production scale growth of AlGaN/GaN field effect transistors

被引：0
|
作者：
Gotthold, D [1 ]
Gibb, S [1 ]
Peres, B [1 ]
Ferguson, I [1 ]
Palmer, C [1 ]
Armour, E [1 ]
机构：
[1] EMCORE Corp, Somerset, NJ 08873 USA
来源：
GAN AND RELATED ALLOYS-2001 | 2002年 / 693卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper addresses issues with the manufacturability of AlGaN/GaN FET structures. A robust Metalorganic Chemical Vapor Deposition growth process has been developed that will now allow reliability measurements to be obtained on the resulting devices. During a small scale production run mobilities in excess of 1600 cm(2)/V.s, sheet charge (N-s) between 0.8X10(13) and 1.2x10(13) cm(-2), and Rs<400 Omega/square with less than 2% variation across the wafer and less than 0.5% variation from wafer to wafer were obtained. Issues for producing a manufacturable process on sapphire and semi-insulating SiC substrates using in-situ monitoring will be addressed. The equivalence of growth on sapphire and SiC substrates for process optimization will be shown.
引用
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页码：635 / 640
页数：4
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