Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

被引：2

作者：

Wei, Tieshi ^{[1
,2
]}

Li, Xuefei ^{[1
]}

Li, Zhiyun ^{[3
]}

Yang, Wenxian ^{[1
]}

Wu, Yuanyuan ^{[1
]}

Xing, Zhiwei ^{[1
]}

Lu, Shulong ^{[1
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[2] Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn NANO X, Suzhou 215123, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2022年 / 43卷 / 12期

基金：

中国国家自然科学基金;

关键词：

XPS; interfacial dynamics; GaP; Si(100) heterostructure; MBE; III-V; GAP(001); SI(100); ION; XPS;

D O I：

10.1088/1674-4926/43/12/122101

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The atomic structure and surface chemistry of GaP/Si(100) heterostructure with different pre-layers grown by molecular beam epitaxy are studied. It is found that GaP epilayer with Ga-riched pre-layers on Si(100) substrate has regular surface morphology and stoichiometric abrupt heterointerfaces from atomic force microscopes (AFMs) and spherical aberration-corrected transmission electron microscopes (ACTEMs). The interfacial dynamics of GaP/Si(100) heterostructure is investigated by X-ray photoelectron spectroscopy (XPS) equipped with an Ar gas cluster ion beam, indicating that Ga pre-layers can lower the interface formation energy and the bond that is formed is more stable. These results suggest that Ga-riched pre-layers are more conducive to the GaP nucleation as well as the epitaxial growth of GaP material on Si(100) substrate.

引用

页数：7

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