XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation

被引：13

作者：

Benamara, Z.

Mecirdi, N.

Bouiadjra, B. Bachir

Bideux, L.

Gruzza, B.

Robert, C.

Miczek, M.

Adamowicz, B.

机构：

[1] Univ Clermont Ferrand, CNRS, LASMEA, UMR 6002, F-63177 Aubiere, France

[2] Univ Sidi Bel Abbes, Lab Microelect Appl, Sidi Bel Abbes 22000, Algeria

[3] Silesian Tech Univ, Inst Phys, Dept Microelect, PL-44100 Gliwice, Poland

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 22期

关键词：

nitridation; XPS; electrical measurements; photoluminescence;

D O I：

10.1016/j.apsusc.2005.09.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS3) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces. The elaborated structures were characterised by I-V analysis. The saturation current I-s, the ideality factor n, the barrier height Phi(Bn) and the serial resistance R-S are determined. The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS3 technique), the value of the interface state density N-SS(E) close to the mid-gap was estimated to be in the range of 2-4 x 10(11) eV(-1) cm(-2), indicating a good electronic quality of the obtained interfaces. Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：7890 / 7894

页数：5

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