Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

被引：89

作者：

Gao, S. ^{[1
]}

Chen, C. ^{[1
]}

Zhai, Z. ^{[2
]}

Liu, H. Y. ^{[1
]}

Lin, Y. S. ^{[1
]}

Li, S. Z. ^{[1
]}

Lu, S. H. ^{[1
]}

Wang, G. Y. ^{[1
]}

Song, C. ^{[1
]}

Zeng, F. ^{[1
]}

Pan, F. ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat MOE, Beijing 100084, Peoples R China

[2] Taiyuan Univ Technol, Dept Met Engn, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 06期

基金：

中国国家自然科学基金;

关键词：

MEMRISTIVE DEVICES; FILAMENT;

D O I：

10.1063/1.4893277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ag/SiO2/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of similar to 10(2), satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO2/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density. (c) 2014 AIP Publishing LLC.

引用

页数：5

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