High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors

被引：15

作者：

Cao, XA

Van Hove, JM

Klaassen, JJ

Polley, CJ

Wowchack, AM

Chow, PP

King, DJ

Ren, F ^{[1
]}

Dang, G

Zhang, AP

Abernathy, CR

Pearton, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(99)00291-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN Bipolar Junction Transistors and GaN/A1GaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250-300 degrees C and power densities > 10 kW cm(-2). The breakdown voltage in both types of devices decreased at higher temperatures, with less degradation in the BJTs. At low current levels, the offset voltages were 2-3 V but increased at higher currents. (C) 2000 Elsevier Science Ltd, All rights reserved.

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收藏

页码：649 / 654

页数：6

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