High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

被引：8

作者：

Horng, RH ^{[1
]}

Lee, CE

Kung, CY

Huang, SH

Wuu, DS

机构：

[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4B期

关键词：

AlGaInP; copper substrate; electroplating; light emitting diodes (LEDs);

D O I：

10.1143/JJAP.43.L576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional A1GaInP/ GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400mA, corresponding to a similar to30degreesC rising in the junction temperature. However, the junction temperature increased to 110degreesC easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

引用

页码：L576 / L578

页数：3

共 10 条

[1] Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes [J].

Chiou, SW ;

Lee, CP ;

Huang, CK ;

Chen, CW .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :2052-2054

[2]

HOFER GE, 1996, APPL PHYS LETT, V69, P803

[3] A method for projecting useful life of LED lighting systems [J].

Hong, E ;

Narendran, N .

THIRD INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2004, 5187 :93-99

[4] AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding [J].

Horng, RH ;

Huang, SH ;

Wuu, DS ;

Chiu, CY .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4011-4013

[5] AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding [J].

Horng, RH ;

Wuu, DS ;

Wei, SC ;

Tseng, CY ;

Huang, MF ;

Chang, KH ;

Liu, PH ;

Lin, KC .

APPLIED PHYSICS LETTERS, 1999, 75 (20) :3054-3056

[6] High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J].

Krames, MR ;

Ochiai-Holcomb, M ;

Höfler, GE ;

Carter-Coman, C ;

Chen, EI ;

Tan, IH ;

Grillot, P ;

Gardner, NF ;

Chui, HC ;

Huang, JW ;

Stockman, SA ;

Kish, FA ;

Craford, MG ;

Tan, TS ;

Kocot, CP ;

Hueschen, M ;

Posselt, J ;

Loh, B ;

Sasser, G ;

Collins, D .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2365-2367

[7] Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes [J].

Pursiainen, O ;

Linder, N ;

Jaeger, A ;

Oberschmid, R ;

Streubel, K .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2895-2897

[8] 30-PERCENT EXTERNAL QUANTUM EFFICIENCY FROM SURFACE TEXTURED, THIN-FILM LIGHT-EMITTING-DIODES [J].

SCHNITZER, I ;

YABLONOVITCH, E ;

CANEAU, C ;

GMITTER, TJ ;

SCHERER, A .

APPLIED PHYSICS LETTERS, 1993, 63 (16) :2174-2176

[9] High brightness AlGaInP light-emitting diodes [J].

Streubel, K ;

Linder, N ;

Wirth, R ;

Jaeger, A .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :321-332

[10] High-brightness AlGaInP light emitting diodes [J].

Vanderwater, DA ;

Tan, IH ;

Hofler, GE ;

Defevere, DC ;

Kish, FA .

PROCEEDINGS OF THE IEEE, 1997, 85 (11) :1752-1764

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