Novel muonium state in CdS

被引:60
作者
Gil, JM [1 ]
Alberto, HV
Vilao, RC
Duarte, JP
Mendes, PJ
Ferreira, LP
de Campos, NA
Weidinger, A
Krauser, J
Niedermayer, C
Cox, SFJ
机构
[1] Univ Coimbra, Dept Fis, P-3000 Coimbra, Portugal
[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[3] Univ Konstanz, Fac Phys, D-78434 Constance, Germany
[4] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
[5] UCL, Dept Phys, London WC1E 6BT, England
关键词
D O I
10.1103/PhysRevLett.83.5294
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A new type of muonium defect center has been observed in undoped CdS below 20 K. The hyperfine interaction amounts only to approximately 10(-4) of the vacuum value, and is shown to have axial symmetry along the Cd-S bond direction. Results suggest that the muon is close to the sulfur antibonding site and the paramagnetic electron density is distributed over a large volume. In contrast to the behavior in other semiconductors, muonium forms a shallow center in CdS. By implication, analog isolated hydrogen impurity atoms act as electrically active shallow-level defect centers in CdS.
引用
收藏
页码:5294 / 5297
页数:4
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