Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode

被引：10

作者：

Ichihara, Tsutomu ^{[1
]}

Hatai, Takashi ^{[1
]}

Koshida, Nobuyoshi ^{[2
]}

机构：

[1] Panason Elect Works Co Ltd, New Prod Technol Dev Dept, Osaka 5718686, Japan

[2] Tokyo Univ Agr & Technol, Grad Sch Engn, Koganei, Tokyo 1848588, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 02期

关键词：

EFFICIENT;

D O I：

10.1116/1.3070655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of electron incidence into xenon gas molecules has been investigated by using a nanocrystalline silicon (nc-Si) planar ballistic emitter. Vacuum-ultraviolet light emission is observed without discharging when the nc-Si device is driven in xenon gas. The emission spectrum of xenon at 10 kPa shows peaks at 152 and 172 nm which originate from Xe-2* radiation. These results strongly suggest that energetic electrons directly excite xenon molecules followed by radiative relaxations. The observed effect is potentially applicable to mercury-free, efficient, and stable fiat panel light sources. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3070655]

引用

页码：772 / 774

页数：3

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