High-κ Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for advanced CMOS

被引：2

作者：

Heyns, Marc ^{[1
]}

Bellenger, Florence ^{[1
]}

Brammertz, Guy ^{[1
]}

Caymax, Matty ^{[1
]}

De Jaeger, Brice ^{[1
]}

Delabie, Annelies ^{[1
]}

Eneman, Geert ^{[1
]}

Houssa, Michel ^{[2
]}

Lin, Dennis ^{[1
]}

Martens, Koen ^{[1
]}

Merckling, Clement ^{[1
]}

Meuris, Marc ^{[1
]}

Mitard, Jerome ^{[1
]}

Penaud, Julien ^{[3
]}

Pourtois, Geoffrey ^{[1
]}

Scarrozza, Marco ^{[1
]}

Simoen, Eddy ^{[1
]}

Sioncke, Sonja ^{[1
]}

Van Elshocht, Sven ^{[1
]}

Wang, Wei-E ^{[4
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Phys, B-3001 Leuven, Belgium

[3] Riber Assignee IMEC, B-3001 Leuven, Belgium

[4] INTEL Assignee IMEC, B-3001 Leuven, Belgium

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期

关键词：

MOLECULAR-BEAM EPITAXY; GATE; SEMICONDUCTORS; SEGREGATION; MOSFET;

D O I：

10.1149/1.3206606

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The use of Ge and III/V materials for future CMOS applications is investigated. Passivation of the Ge surface can be obtained by either GeO2 or a thin Si layer. Short channel Ge pMOS devices with low EOT are fabricated. The passivation of III/V materials is a very challenging topic. Some critical issues and passivation schemes are investigated and the performance of inversion channel MOSFET's on In0.53Ga0.47As with ALD Al2O3 is discussed.

引用

页码：51 / 65

页数：15

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