Preparation of adherent MnSix films

被引:14
作者
Hou, QR [1 ]
Wang, ZM
Chen, YB
He, YJ
机构
[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China
[2] Tsing Hua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2002年 / 16卷 / 07期
关键词
D O I
10.1142/S021798490200366X
中图分类号
O59 [应用物理学];
学科分类号
摘要
The adhesion of manganese silicide (MnSix) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSix (x similar to 1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSix (x similar to 1.7) film were measured by a nano-indenter and the values are 8.8 +/- 1.0 GPa and 141 +/- 15 GPa, respectively.
引用
收藏
页码:205 / 215
页数:11
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