Surface Dead Layer for Quasiparticles Near a Mott Transition

被引:49
作者
Borghi, Giovanni [1 ,2 ]
Fabrizio, Michele [1 ,2 ,3 ]
Tosatti, Erio [1 ,2 ,3 ,4 ]
机构
[1] CNR INFM, Int Sch Adv Studies SISSA, I-34014 Trieste, Italy
[2] CNR INFM, CRS Democritos, I-34014 Trieste, Italy
[3] Abdus Salam Int Ctr Theoret Phys, I-34014 Trieste, Italy
[4] Univ Paris 11, CNRS, Phys Solides Lab, UMR 8502, F-91405 Orsay, France
关键词
METAL-INSULATOR-TRANSITION; MEAN-FIELD THEORY; CR-DOPED V2O3; VANADIUM-OXIDES; PHOTOEMISSION; SPECTROSCOPY; SYSTEMS;
D O I
10.1103/PhysRevLett.102.066806
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electron quasiparticles are progressively weakened by correlations upon approaching a continuos Mott metal-insulator transition in a bulk solid. We show that corresponding to the bulk weakening, a dead layer forms below the surface of the solid, where quasiparticles are exponentially suppressed. The surface dead layer depth is a bulk property and diverges when the Mott transition is approached. We describe this phenomenon in a Hubbard model within a self-consistent Gutzwiller approximation. The photoemission data of Rodolakis et al. [Phys. Rev. Lett. 102, 066805 (2009)] in V2O3 appear to be in accord with this physical picture.
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页数:4
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