High-mobility ambipolar ZnO-graphene hybrid thin film transistors

被引：49
作者：
Song, Wooseok [1 ]
Kwon, Soon Yeol [1 ]
Myung, Sung [1 ]
Jung, Min Wook [1 ]
Kim, Seong Jun [1 ]
Min, Bok Ki [1 ]
Kang, Min-A [1 ]
Kim, Sung Ho [1 ]
Lim, Jongsun [1 ]
An, Ki-Seok [1 ]
机构：
[1] Korea Res Inst Chem Technol, Thin Film Mat Res Grp, Taejon 305600, South Korea
来源：
SCIENTIFIC REPORTS | 2014年 / 4卷
关键词：
METAL-DOPED ZNO; HIGH-PERFORMANCE; LOW-TEMPERATURE; PHASE;
D O I：
10.1038/srep04064
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 +/- 16.9 cm(2)/V center dot s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.
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页数：6
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