Self-diffusion of Al and Pb atoms in Al-Pb immiscible alloy system

被引:14
作者
Fang, F [1 ]
Zhu, M
Deng, HQ
Shu, XL
Hu, WY
机构
[1] Shanghai Jiao Tong Univ, Thin Films & Microfabricat Key Lab State Educ Min, Res Inst Micro Nanometer Sci & Technol, Shanghai 200030, Peoples R China
[2] Univ Sci & Technol China, Sch Mech Engn, Guangzhou 510640, Peoples R China
[3] Hunan Univ, Dept Appl Phys, Changsha 410082, Peoples R China
[4] Cent Iron & Steel Res Inst, Beijing 100081, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 108卷 / 03期
关键词
Al-Pb immiscible alloy system; mechanical alloying; modified analytic embedded atom method; self-diffusion;
D O I
10.1016/j.mseb.2004.01.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Al-Pb binary alloy system exhibits a positive heat mixing that precludes intermixing by conventional techniques, it is possible to achieve solid state alloying between these two immiscible elements in nanostructures by mechanical alloying (MA). The studies of detailed atomistic diffusion process of dynamic movement for Al and Pb were carried out by computer simulation, in conjunction with modified analytic embedded atom method (MAEAM). Computational results have clarified that the nearest-neighbor diffusion path is the dominant jump vector for both Al and Pb atom diffusion. The migration energies along this path have been estimated to be 0.35083 and 0.10538 eV, respectively. The self-diffusion activation energies for Al and Pb along NN jump are 0.99557 and 0.85919 eV, respectively. The calculated results reveal that Ph atom diffuses much faster than Al atom does, which concluded that Ph atom is the diffusive species in Al-Pb immiscible alloy system. The calculated self-diffusion activation energies for nano-sized Al and Pb grains are 0.83192 and 0.70455 eV, respectively. They are lower than that for normal sized Al and Ph grains, which facilitates the atomic diffusion and alloying during MA process in Al-Pb immiscible alloy system. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:253 / 257
页数:5
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