Behavior of Electrodeposited Cd and Pb Schottky Junctions on CH3-Terminated n-Si(111) Surfaces

被引:14
作者
Maldonado, Stephen [1 ]
Lewis, Nathan S.
机构
[1] CALTECH, Beckman Inst, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
cadmium; electrodeposition; lead; passivation; Schottky barriers; surface treatment; X-ray photoelectron spectra; TERMINATED SI(111) SURFACES; METAL-SEMICONDUCTOR DIODES; N-SI ELECTRODES; ELECTROCHEMICAL NUCLEATION; CYCLIC VOLTAMMETRY; CRYSTALLINE SI(111); SILICON SURFACES; ALKYL MONOLAYERS; CHARGE-TRANSFER; SOLAR-CELLS;
D O I
10.1149/1.3021450
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
n-Si/Cd and n-Si/Pb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and CH3-terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n(+)-) doped H-Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (Phi(b)) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped CH3-terminated n(+)-Si(111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n(+)-Si(111). However, electrodeposition on nondegenerately doped CH3-terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by -130 and -347 mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of Phi(b) for contacts on nondegenerately doped n-type CH3-Si(111) surfaces. With either Cd or Pb, current-voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of Phi(b) were obtained on CH3-terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that CH3-Si(111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H-Si(111) surfaces, attesting to the high degree of structural passivation afforded by the CH3-Si surface modification.
引用
收藏
页码:H123 / H128
页数:6
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