Growth and characterization of epitaxial Ba2Bi4Ti5O18 films deposited by pulsed laser ablation

被引：13
|
作者：
James, AR [1 ]
Pignolet, A [1 ]
Senz, S [1 ]
Zakharov, ND [1 ]
Hesse, D [1 ]
机构：
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 05期
关键词：
ferroelectrics; thin films; epitaxy; laser processing;
D O I：
10.1016/S0038-1098(00)00048-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Optimal conditions for the growth of epitaxial quality layers of ferroelectric Ba2Bi4Ti5O18 films, by pulsed laser ablation have been determined. The ferroelectric layer was deposited on a stack of buffer layers comprising LaNiO3/CeO2/YSZ. All the layers in the buffer stack were deposited by excimer laser ablation as well. Films on large area Si(100) wafers, 3 inches in diameter showed good thickness and compositional uniformity. The quality of epitaxy of the oriented films was studied with the help of X-ray diffraction, scanning force microscopy (SFM) and cross-section transmission electron microscopy (XTEM) techniques. Ferroelectric hysteresis loops were recorded with values of P-s and P-r of 1.3 mu C/cm(2) and 0.6 mu C/cm(2), respectively. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：249 / 253
页数：5
相关论文
共 50 条
  • [21] Characterization of TiAlN films deposited by reactive pulsed laser ablation
    Acquaviva, S
    D'Anna, E
    Elia, L
    Fernández, M
    Leggieri, G
    Luches, A
    Martino, M
    Mengucci, P
    Zocco, A
    THIN SOLID FILMS, 2000, 379 (1-2) : 45 - 49
  • [22] Characterization of Hastelloy thin films deposited by pulsed laser ablation
    Vignolo, MF
    Avram, I
    Duhalde, S
    Morales, C
    Pérez, T
    Cultrera, L
    Perrone, A
    Zocco, A
    APPLIED SURFACE SCIENCE, 2002, 197 : 343 - 347
  • [23] Growth evolution of ZnO films deposited by pulsed laser ablation
    Vasco, E
    Zaldo, C
    Vázquez, L
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (28) : L663 - L672
  • [24] Characterization of epitaxial Pb(Zr, Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers
    Nguyen, M. D.
    Nazeer, H.
    Karakaya, K.
    Pham, S. V.
    Steenwelle, R.
    Dekkers, M.
    Abelmann, L.
    Blank, D. H. A.
    Rijnders, G.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2010, 20 (08)
  • [25] Epitaxial growth and characterization of copper gallate (CuGa2O4) thin films by pulsed laser deposition
    Emu, Injamamul Hoque
    Samuels, Brian C.
    Karmakar, Subrata
    Hamid, Md Abdul
    Shiam, Istiaq Firoz
    Sarkar, Pallab Kumar
    Tasnim, Ayesha
    Haque, Ariful
    Droopad, Ravi
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 185
  • [26] Epitaxial growth and characterization of magnesium gallate (MgGa2O4) thin films by pulsed laser deposition
    Hamid, Md Abdul
    Samuels, Brian
    Karmakar, Subrata
    Halim, Md Abdul
    Emu, Injamamul Hoque
    Sarkar, Pallab Kumar
    Taufique, M. F. N.
    Haque, Ariful
    Droopad, Ravi
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 972
  • [27] Epitaxial growth of (Sr, Ba)Nb2O6 thin films by pulsed laser deposition
    Tanaka, Katsuhiko
    Nakagawara, Osamu
    Nakano, Mitsuru
    Shimuta, Tooru
    Tabata, Hitoshi
    Kawai, Tomoji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (11): : 6142 - 6145
  • [28] Microstructure and dielectric properties of epitaxial Bi2WO6 deposited by pulsed laser ablation
    Hamada, M
    Tabata, H
    Kawai, T
    THIN SOLID FILMS, 1997, 306 (01) : 6 - 9
  • [29] Epitaxial growth of (Sr,Ba)Nb2O6 thin films by pulsed laser deposition
    Tanaka, K
    Nakagawara, O
    Nakano, M
    Shimuta, T
    Tabata, H
    Kawai, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (11): : 6142 - 6145
  • [30] Structural studies of pulsed-laser-deposited Ba4Fe4Ti3O16 oxide films
    Bendersky, LA
    Maier, R
    Cohn, JL
    Neumeier, JJ
    JOURNAL OF MATERIALS RESEARCH, 2000, 15 (06) : 1389 - 1396
12345