Growth and characterization of epitaxial Ba2Bi4Ti5O18 films deposited by pulsed laser ablation

被引：13
|
作者：
James, AR [1 ]
Pignolet, A [1 ]
Senz, S [1 ]
Zakharov, ND [1 ]
Hesse, D [1 ]
机构：
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
SOLID STATE COMMUNICATIONS | 2000年 / 114卷 / 05期
关键词：
ferroelectrics; thin films; epitaxy; laser processing;
D O I：
10.1016/S0038-1098(00)00048-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Optimal conditions for the growth of epitaxial quality layers of ferroelectric Ba2Bi4Ti5O18 films, by pulsed laser ablation have been determined. The ferroelectric layer was deposited on a stack of buffer layers comprising LaNiO3/CeO2/YSZ. All the layers in the buffer stack were deposited by excimer laser ablation as well. Films on large area Si(100) wafers, 3 inches in diameter showed good thickness and compositional uniformity. The quality of epitaxy of the oriented films was studied with the help of X-ray diffraction, scanning force microscopy (SFM) and cross-section transmission electron microscopy (XTEM) techniques. Ferroelectric hysteresis loops were recorded with values of P-s and P-r of 1.3 mu C/cm(2) and 0.6 mu C/cm(2), respectively. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：249 / 253
页数：5
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