共 44 条
Non-silicon MEMS platforms for gas sensors
被引:72
作者:
Vasiliev, A. A.
[1
,2
]
Pisliakov, A. V.
[1
]
Sokolov, A. V.
[1
]
Samotaev, N. N.
[3
]
Soloviev, S. A.
[3
]
Oblov, K.
[3
]
Guarnieri, V.
[4
]
Lorenzelli, L.
[4
]
Brunelli, J.
[5
]
Maglione, A.
[5
]
Lipilin, A. S.
[6
]
Mozalev, A.
[7
]
Legin, A. V.
[2
,8
]
机构:
[1] Natl Res Ctr, Kurchatov Inst, Moscow, Russia
[2] St Petersburg ITMO Univ, St Petersburg, Russia
[3] Natl Res Nucl Univ MEPhI, Moscow, Russia
[4] Fdn Bruno Kessler, IRST, Trento, Trento, Italy
[5] Optoi Microelect, Trento, Trento, Italy
[6] RAS, Ural Branch, Inst Electrophys, Ekaterinburg, Russia
[7] Brno Univ Technol, Cent European Inst Technol CEITEC, Brno 61600, Czech Republic
[8] St Petersburg State Univ, St Petersburg 199034, Russia
基金:
俄罗斯科学基金会;
关键词:
Microhotplates;
Gas sensors;
Ceramic MEMS;
SEMICONDUCTOR;
OXIDATION;
METHANE;
LAYER;
D O I:
10.1016/j.snb.2015.10.066
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
The target of this work is the demonstration of advanced approaches able to provide non-silicon MEMS platforms for chemical sensor operating under harsh environmental conditions and, on the other hand, to assure microhotplate stable at high temperature, which can be used for the deposition of refractory gassensing materials, for example, oxides of gallium, zirconium, or hafnium. Non-silicon materials that can be used for these MEMS platforms include aluminum oxide, yttria-stabilized zirconia and thin boro silicate glass. It was shown that thin ceramic films made of oxide materials can withstand annealing temperature up to 1000 degrees C, MEMS sensor based on these films consumes <70 mW at continuous heating at 450 degrees C and similar to 1 mW in pulsed heating operation mode. Ceramic MEMS show higher stability at high temperature compared to silicon technology based MEMS, whereas power consumption of both types of devices is comparable. (C) 2015 Elsevier B.V. All rights reserved.
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页码:700 / 713
页数:14
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