Kinetics of GaAs (100) surface passivation in aqueous solutions of sodium sulfide

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作者
Bessolov, VN
Ivankov, AF
Konenkova, EV
Lebedev, MV
Strykanov, VS
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O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The photoluminescence intensity variation of GaAS (100) after surface passivation in aqueous solutions of sodium sulfide has been studied as a function of the processing time, the temperature, and the composition of the sulfide solution. It is shown that, as the processing time in the sulfide solution increases, the intensity of the photoluminescence peak first increases and then saturates. The time required to attain saturation depends on the alkalinity of the solution and on the sulfide-ion concentration in it. For fixed processing time, the intensity of the photoluminescence peak increases as the sulfidation temperature increases. X-ray photoelectron spectroscopy data for the sulfided surfaces, first, shows the presence of Ga-S bonds and, second, indicates that the concentration of arsenic oxides on the semiconductor surface decreases as the sulfidation temperature increases. The increase in the photoluminescence intensity accompanying sulfide passivation is attributed principally to the decrease in the concentration of these oxides. (C) 1996 American Institute of Physics.
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页码:201 / 206
页数:6
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