Resistivity minimum and anisotropy in R2PdSi3 (R = Ce, Gd)

被引:5
|
作者
Saha, SR
Sugawara, H
Matsuda, TD
Aoki, Y
Sato, H
Sampathkumaran, EV
机构
[1] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan
[2] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
来源
PHYSICA B | 2000年 / 281卷
关键词
Ce2PdSi3; Gd2PdSi3; resistivity minimum;
D O I
10.1016/S0921-4526(99)01005-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have measured electrical resistivity (rho) and magnetization (M) on the single crystal R2PdSi3 (R = Ce,Gd). A minimum in rho in each compound reported earlier in polycrystals is observed also in single crystals. The rho minima in two compounds are apparently of different origins. Both compounds exhibit large anisotropy, though Gd is a S-state ion. M in Ce2PdSi3 is highly anisotropic with the orientation of the applied magnetic: fields due to crystal field (CEF), while M in Gd2PdSi3, shows two step metamagnetic anomalies for the magnetic field along [0001]. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:116 / 117
页数:2
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