Photosensitive anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions

被引：6
|
作者：
Kudrynskyi, Z. R. [1 ]
Kovalyuk, Z. D. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Frantsevich Inst Mat Sci Problems, UA-58001 Chernovtsy, Ukraine
来源：
TECHNICAL PHYSICS | 2014年 / 59卷 / 08期
关键词：
ELECTRICAL-PROPERTIES; NANOSTRUCTURES; NANOSHEETS; CRYSTALS;
D O I：
10.1134/S106378421408012X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions are obtained for the first time. They are grown on layered crystalline GaSe and InSe substrates by annealing in Zn vapor. It is found that these heterojunctions are sensitive to light in the near-infrared and visible spectral ranges.
引用
收藏
页码：1205 / 1208
页数：4
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