Edge States of Zigzag Boron Nitride Nanoribbons

被引:31
作者
Zheng, Fawei [1 ,2 ,3 ]
Sasaki, Ken-ichi [4 ]
Saito, Riichiro [1 ]
Duan, Wenhui [2 ,3 ]
Gu, Bing-Lin [2 ,3 ]
机构
[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[2] Tsinghua Univ, Ctr Adv Study, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Hiroshima Univ, Dept Quantum Matter, Hiroshima 7398530, Japan
关键词
boron nitride; snanoribbons; edge states; half metallicity; RIBBONS;
D O I
10.1143/JPSJ.78.074713
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Tight-binding (TB) calculation for zigzag boron nitride nanoribbons (ZBNNRs) is presented. The TB parameters are obtained so as to reproduce density functional calculation. The analytical expressions of boron (nitrogen) edge states that lie near the bottom (top) of conductance (valence) bands are given. The modification of the potential near the edge is found to be important in explaining the small energy dispersion of the edge states. The energy band gap of ZBNNR decreases with increasing ribbon width, which is explained by the edge potential. We also discuss the half metallicity for ZBNNR by considering the Hubbard-type Coulomb interaction.
引用
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页数:6
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