Dynamic behavior of high-power diodes analyzed by EBIC

被引：0

作者：

Pugatschow, A. ^{[1
]}

Geinzer, T. ^{[1
]}

Heiderhoff, R. ^{[1
]}

Niedernostheide, F. -J. ^{[2
]}

Schulze, H. -J. ^{[2
]}

Wiedenhorst, B. ^{[3
]}

Balk, L. J. ^{[1
]}

机构：

[1] Berg Univ Wuppertal, Fachbereich Elektrotech Informationtech Medientec, Lehrstuhl Elekt, Rainer Gruenter Str 21, Wuppertal, Germany

[2] Infineon Technol, D-81726 Munich, Germany

[3] Infineon AG, D-59581 Warstein, Germany

来源：

PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A setup is described which allows investigations of electric field distributions in the top layers of a dynamically driven power device by means of time-resolved Electron Beam Induced Currents (EBIC). Functionality of the field termination structures, e.g. guard rings can be visualized under transient bias conditions. Reverse and forward recovery of an 800-V diode was investigated by this technique and the obtained results were compared to EBIC-maps recorded on a statically biased device.

引用

页码：157 / +

页数：2

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