Plasmonic single-mode Fabry-Perot lasers based on Schottky contact

被引：0
|
作者：
Li, Yu [1 ]
Li, Xun [2 ]
Huang, Wei-Ping [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan, Shandong, Peoples R China
[2] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4L8, Canada
来源：
OPTICS COMMUNICATIONS | 2014年 / 322卷
基金：
中国国家自然科学基金;
关键词：
Semiconductor laser; Plasma lifts; Heavily-doped layer; POLARITON AMPLIFICATION; SURFACE; PROPAGATION; GENERATION; GAIN;
D O I：
10.1016/j.optcom.2014.02.039
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The single mode plasmonic Fabry-Perot (FP) lasers are designed by introducing an inversely heavily doped semiconductor layer to the Schottky contact, to provide both carrier confinement and adjustable barrier for the Ill -V type high gain materials. The pixel method is also used to allocate nun periodic slot positions onto the FP cavity for the single-mode filtering and selection. (C) 2014 Elsevier B.V. All rights reserved
引用
收藏
页码：155 / 159
页数：5
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