Closed form expressions for sheet resistance and mobility from Van-der-Pauw measurement on 90° symmetric devices with four arbitrary contacts

被引：21

作者：

Ausserlechner, Udo ^{[1
]}

机构：

[1] Infineon Technol Austria AG, A-9500 Villach, Austria

来源：

SOLID-STATE ELECTRONICS | 2016年 / 116卷

关键词：

Conformal mapping; Device characterization; Device modeling; Hall plate; Sheet resistance; Van der Pauw method;

D O I：

10.1016/j.sse.2015.11.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sheet resistance and Hall mobility are commonly measured by Van der Pauw's method. Closed form expressions are known for four point-sized contacts. Recently, for devices with fourfold rotational symmetry a closed form expression for the sheet resistance was given for contacts of arbitrary size. In this paper we discuss its accuracy, link it to the equivalent circuit diagram of the device, and add another expression that determines the Hall mobility with 0.02% accuracy. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：46 / 55

页数：10

共 21 条

[1]

Ausserlechner U, ELECT ENG

[2]

Ausserlechner U, UPB SCI B A UNPUB

[3] Multidimensional CMOS in-plane stress sensor [J].

Bartholomeyczik, J ;

Brugger, S ;

Ruther, P ;

Paul, O .

IEEE SENSORS JOURNAL, 2005, 5 (05) :872-882

[4] Sheet resistance-determination using symmetric structures with contacts of finite size [J].

Cornils, Martin ;

Doelle, Michael ;

Paul, Oliver .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2756-2761

[5] How to Extract the Sheet Resistance and Hall Mobility From Arbitrarily Shaped Planar Four-Terminal Devices With Extended Contacts [J].

Cornils, Martin ;

Rottmann, Axel ;

Paul, Oliver .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (09) :2087-2097

[6] LOW FIELD HALL-EFFECT MAGNETOMETRY [J].

DANIIL, P ;

COHEN, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :8257-8259

[7] Geometry optimization for planar piezoresistive stress sensors based on the pseudo-Hall effect [J].

Doelle, M ;

Mager, D ;

Ruther, P ;

Paul, O .

SENSORS AND ACTUATORS A-PHYSICAL, 2006, 127 (02) :261-269

[8] CONCENTRATION-DEPENDENCE OF HALL FACTOR IN N-TYPE SILICON [J].

KIRNAS, IG ;

KURILO, PM ;

LITOVCHENKO, PG ;

LUTSYAK, VS ;

NITSOVICH, VM .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (02) :K123-K127

[9] The van der Pauw stress sensor [J].

Mian, A ;

Suhling, JC ;

Jaeger, RC .

IEEE SENSORS JOURNAL, 2006, 6 (02) :340-356

[10]

Motz M., 2012, P IEEE SENSORS, P1, DOI [10.1109/ICSENS.2012.6411161, DOI 10.1109/ICSENS.2012.6411161]

← 1 2 3 →