Effect of Curing Conditions of a Poly(4-vinylphenol) Gate Dielectric on the Performance of a Pentacene-based Thin Film Transistor

被引：8

作者：

Hwang, Minkyu ^{[1
]}

Lee, Hwa Sung ^{[1
]}

Jang, Yunseok ^{[1
]}

Cho, Jeong Ho ^{[1
]}

Lee, Shichoon ^{[1
]}

Kim, Do Hwan ^{[1
]}

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea

来源：

MACROMOLECULAR RESEARCH | 2009年 / 17卷 / 06期

关键词：

poly(4-vinylphenol); pentacene; transistor; OTFTs; surface energy; FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; EFFECT MOBILITY; ELECTRONICS; ENHANCEMENT; LAYER;

D O I：

10.1007/BF03218886

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.

引用

页码：436 / 440

页数：5

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