On the way to the II-VI quantum dot VCSEL

被引：7

作者：

Passow, T ^{[1
]}

Klude, M ^{[1
]}

Kruse, C ^{[1
]}

Leonardi, K ^{[1
]}

Kröger, R ^{[1
]}

Alexe, G ^{[1
]}

Sebald, K ^{[1
]}

Ulrich, S ^{[1
]}

Michler, P ^{[1
]}

Gutowski, J ^{[1
]}

Heinke, H ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany

来源：

ADVANCES IN SOLID STATE PHYSICS 42 | 2002年 / 42卷

关键词：

D O I：

10.1007/3-540-45618-X_2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Formation mechanisms of quantum (lots in the system CdSe/ZnSe are thoroughly analyzed in this paper. Defect free QDs are generated by segregation enhanced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a T(0) value of about 1200K up to 100K was determined by threshold measurements. Electrically pumped lasing at room temperature was achieved above a threshold current density of 7.5 kA/cm(2). Degradation measurements prove a higher stability of QDs against high current injection as compared to quantum wells. High reflectivities of above 99 % for undoped and p-type doped distributed Bragg reflectors based on ZnSe and MgS/ZnSe superlattices have been obtained. Monolithic vertical resonators possess a quality factor of about 100.

引用

页码：13 / 25

页数：13

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