Strain measurements in ultra-thin buried films (<50Å) with RBS ion channeling

被引：5

作者：

Selen, LJM

Janssen, FJJ

van IJzendoorn, LJ

Theunissen, MJJ

Smulders, PJM

de Voigt, MJA

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, Cyclotron Lab, Res Sch CPS, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, Eindhoven, Netherlands

[3] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

axial channeling; flux distributions; angular dependence; MC simulations;

D O I：

10.1016/S0168-583X(99)00903-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A method has been developed to measure strain in ultra-thin (<50 Angstrom) buried films. The presence of the film leads to a step in the yield of the host crystal in a channeled RES spectrum for off-normal crystal axes. The size of this step depends on the Aux distributions in the channel, which in turn depend on the angle psi between the incoming beam and the crystal axis. Two maxima in the step size appear as a function of the angle psi. Monte Carlo (MC) simulations have been used to interpret the experiments. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：492 / 495

页数：4

Strain measurements in ultra-thin buried films (&lt;50Å) with RBS ion channeling

Strain measurements in ultra-thin buried films (<50Å) with RBS ion channeling