2D mapping of the response of CVD diamond X-ray detectors:: defects and device dynamics

被引：5
作者：
Guerrero, MJ
Tromson, D
Barrett, R
Tachouères, RT
Bergonzo, P [1 ]
机构：
[1] CEA Saclay, LIST CEA Rech Technol, DETECS SSTM, F-91191 Gif Sur Yvette, France
[2] ESRF, Grenoble, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 11期
关键词：
D O I：
10.1002/pssa.200405186
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
To investigate the influence of intrinsic defects in polycrystalline CVD diamond, we have used a microfocused X-ray beam to induce local photo-currents in solid state ionisation chambers. The device behaviour was studied as a function of the defect level populations. This microscopic study of the X-ray sensitivity was then performed using varying initial states of the devices as well as varying device temperatures. These measurements, coupled with the study of the temporal evolution of the photocurrent as a function of the temperature, seemed to demonstrate the existence of highly localised regions that may detrimentally affect the overall device response. This may demonstrate that the imperfections CVD diamond devices exhibit may be caused by extremely localised point defects. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weirlheim.
引用
收藏
页码：2529 / 2535
页数：7
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