Isotropic etching of SiGe alloys with high selectivity to similar materials

被引：38

作者：

Borel, S

Arvet, C

Bilde, J

Harrison, S

Louis, D

机构：

[1] CEA, Leti, F-38054 Grenoble 9, France

[2] ST Microelect, F-38019 Grenoble, France

[3] L2MP, F-13384 Marseille 13, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

isotropic etching; etch selectivity; SiGe; gate all around;

D O I：

10.1016/j.mee.2004.02.057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An isotropic etching process was developed in order to remove the sacrificial SiGe layer in Si/SiGe/Si stacks and thus obtain a cavity between the Si layers. This process is shown to be selective versus silicon as long as some SiGe remains, but the Si etch rate increases suddenly when the SiGe disappears. A mechanism based on the preferential action of fluorine species is proposed. It is corroborated by the results obtained on advanced electrical devices. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：301 / 305

页数：5

共 6 条

[1] SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition [J].

Hartmann, JM ;

Loup, V ;

Rolland, G ;

Holliger, P ;

Laugier, F ;

Vannuffel, C ;

Séméria, MN .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) :10-20

[2] Analysis and characterization of native oxide growth on epitaxial Si1-xGex films after a chemical clean [J].

Lee, IM ;

Takoudis, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (06) :3154-3157

[3] EFFECT OF OXYGEN ON FLUORINE-BASED REMOTE PLASMA-ETCHING OF SILICON AND SILICON DIOXIDE [J].

LOEWENSTEIN, LM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1984-1988

[4] Role of N-2 addition on CF4/O-2 remote plasma chemical dry etching of polycrystalline silicon [J].

Matsuo, PJ ;

Kastenmeier, BEE ;

Beulens, JJ ;

Oehrlein, GS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04) :1801-1813

[5] Silicon etching in NF3/O2 remote microwave plasmas [J].

Matsuo, PJ ;

Kastenmeier, BEE ;

Oehrlein, GS ;

Langan, JG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05) :2431-2437

[6] 50nm-gate all around (GAA) - Silicon on nothing (SON) - Devices: A simple way to co-integration of GAA transistors within bulk MOSFET process [J].

Monfray, S ;

Skotnicki, T ;

Morand, Y ;

Descombes, S ;

Coronel, P ;

Mazoyer, P ;

Harrison, S ;

Ribot, P ;

Talbot, A ;

Dutartre, D ;

Haond, M ;

Palla, R ;

Le Friec, Y ;

Leverd, F ;

Nier, ME ;

Vizioz, C ;

Louis, D .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :108-109

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