Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer

被引：19

作者：

Chandrasekaran, Sridhar ^{[1
]}

Simanjuntak, Firman Mangasa ^{[2
]}

Tseng, Tseung-Yuen ^{[3
,4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn & Comp Sci, Hsinchu 30010, Taiwan

[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808576, Japan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 04期

关键词：

MECHANISMS; PROSPECTS;

D O I：

10.7567/JJAP.57.04FE10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance. (c) 2018 The Japan Society of Applied Physics.

引用

页数：4