Signatures of nonthermal melting

被引:29
作者
Zier, Tobias [1 ,2 ]
Zijlstra, Eeuwe S. [1 ,2 ]
Kalitsov, Alan [3 ]
Theodonis, Ioannis [4 ]
Garcia, Martin E. [1 ,2 ]
机构
[1] Univ Kassel, Theoret Phys, D-34132 Kassel, Germany
[2] Univ Kassel, Ctr Interdisciplinary Nanostruct Sci & Technol CI, D-34132 Kassel, Germany
[3] Univ Alabama, MINT, Tuscaloosa, AL 35487 USA
[4] Natl Tech Univ Athens, Dept Phys, GR-15773 Athens, Greece
来源
STRUCTURAL DYNAMICS-US | 2015年 / 2卷 / 05期
关键词
CARRIER RELAXATION; DYNAMICS; SILICON; SI; LIMIT;
D O I
10.1063/1.4928686
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Intense ultrashort laser pulses can melt crystals in less than a picosecond but, in spite of over thirty years of active research, for many materials it is not known to what extent thermal and nonthermal microscopic processes cause this ultrafast phenomenon. Here, we perform ab-initio molecular-dynamics simulations of silicon on a laser-excited potential-energy surface, exclusively revealing nonthermal signatures of laser-induced melting. From our simulated atomic trajectories, we compute the decay of five structure factors and the time-dependent structure function. We demonstrate how these quantities provide criteria to distinguish predominantly nonthermal from thermal melting. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数:9
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