Terahertz Metamaterial Absorbers Implemented in CMOS Technology for Imaging Applications: Scaling to Large Format Focal Plane Arrays

被引:92
作者
Carranza, Ivonne Escorcia [1 ]
Grant, James P. [1 ]
Gough, John [2 ]
Cumming, David [1 ]
机构
[1] Univ Glasgow, Sch Engn, Microsyst Technol Grp, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
基金
英国工程与自然科学研究理事会;
关键词
Uncooled bolometers; CMOS image sensors; terahertz imaging; terahertz metamaterials; MULTISPECTRAL MATERIALS HYBRIDIZATION; OPTICAL PLASMONIC FILTERS; PIXEL; DRUGS;
D O I
10.1109/JSTQE.2016.2630307
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the design and fabrication of terahertz (THz) metamaterial (MM) absorbers and their monolithic integration into a commercial CMOS technology along with its respective readout electronics to produce a low-cost, uncooled, and high resolution THz camera. We first describe the work done on single band and broadband MM absorbers on custom substrates, then progress with a description of the integration of such resonators into a six metal layer 180 nm CMOS process and its coupling with two types of microbolometer sensors: Vanadium oxide (VOx) and silicon (Si) pn diode. Additionally, we demonstrate the integration of the THz sensors with readout electronics to form a monolithic THz focal plane array (FPA). Reflection images of a metallic object hidden in a manila envelope are recorded using both the VOx and Si pn diode detectors, demonstrating the suitability of the technology for stand-off detection of concealed objects. Finally, we present the current work toward scaling this technology into a 64 x 64 FPA.
引用
收藏
页数:8
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