Electrostatic Design of Polar Metal-Organic Framework Thin Films

被引:9
作者
Nascimbeni, Giulia [1 ]
Woll, Christof [2 ]
Zojer, Egbert [1 ]
机构
[1] Graz Univ Technol, Inst Solid State Phys, NAWI Graz, Petersgasse 16, A-8010 Graz, Austria
[2] Karlsruhe Inst Technol KIT, Inst Funct Interfaces IFG, Hermann von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
基金
奥地利科学基金会;
关键词
metal– organic frameworks; electronic structure; electrostatic design; density functional theory; work-function change; polar MOFs; bonding asymmetry; SELF-ASSEMBLED MONOLAYERS; ELECTRONIC-STRUCTURE; EXCITON DIFFUSION; CHARGE-TRANSFER; ENERGY; ADSORPTION; INTERFACES; CONVERSION; POLYMERS; REMOVAL;
D O I
10.3390/nano10122420
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In recent years, optical and electronic properties of metal-organic frameworks (MOFs) have increasingly shifted into the focus of interest of the scientific community. Here, we discuss a strategy for conveniently tuning these properties through electrostatic design. More specifically, based on quantum-mechanical simulations, we suggest an approach for creating a gradient of the electrostatic potential within a MOF thin film, exploiting collective electrostatic effects. With a suitable orientation of polar apical linkers, the resulting non-centrosymmetric packing results in an energy staircase of the frontier electronic states reminiscent of the situation in a pin-photodiode. The observed one dimensional gradient of the electrostatic potential causes a closure of the global energy gap and also shifts core-level energies by an amount equaling the size of the original band gap. The realization of such assemblies could be based on so-called pillared layer MOFs fabricated in an oriented fashion on a solid substrate employing layer by layer growth techniques. In this context, the simulations provide guidelines regarding the design of the polar apical linker molecules that would allow the realization of MOF thin films with the (vast majority of the) molecular dipole moments pointing in the same direction.
引用
收藏
页码:1 / 18
页数:18
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