Ionization Potentials of Solids: The Importance of Vertex Corrections

被引:196
作者
Grueneis, Andreas [1 ,2 ]
Kresse, Georg [1 ,2 ]
Hinuma, Yoyo [3 ]
Oba, Fumiyasu [3 ,4 ]
机构
[1] Univ Vienna, Fac Phys, A-1090 Vienna, Austria
[2] Univ Vienna, Ctr Computat Mat Sci, A-1090 Vienna, Austria
[3] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
[4] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, Japan
基金
奥地利科学基金会;
关键词
BAND-GAPS; ENERGIES; SEMICONDUCTORS; APPROXIMATION;
D O I
10.1103/PhysRevLett.112.096401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The ionization potential is a fundamental key quantity with great relevance to diverse material properties. We find that state of the art methods based on density functional theory and simple diagrammatic approaches as commonly taken in the GW approximation predict the ionization potentials of semiconductors and insulators unsatisfactorily. Good agreement between theory and experiment is obtained only when diagrams resulting from the antisymmetry of the many-electron wave function are taken into account via vertex corrections in the self-energy. The present approach describes both localized and delocalized states accurately, making it ideally suited for a wide class of materials and processes.
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收藏
页数:5
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