Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

被引：0
|
作者：
Shiino, T. [1 ]
Saitoh, T. [1 ]
Kajiwara, H. [1 ]
Toyoda, Y. [1 ]
Nakamura, T. [1 ]
Inada, T. [1 ]
机构：
[1] Hosei Univ, Tokyo 1848584, Japan
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY | 2009年 / 27期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon ions have been implanted into GaN/AlGaN/GaN in the dose range of 1.06x10(15)/cm(2) and ion energy of 80keV Then Silicon ions have been implanted into GaN/AlGaN/GaN in the total dose range from 3.28x10(15)/cm(2) to 1.15x10(15)/cm(2) and ion energy of 30keV The Si-implanted GaN/AlGaN/GaN has been annealed at 1200 degrees C in N(2) gas flow for 2 minutes. A very low sheet resistance of 138 Omega/square for implanted Si atoms can be achieved for a dose of 3.28x10(15)/cm(2). This value is approximately equal with a value of only dose range of 1.00x10(15)/cm(2) and ion energy of 80keV A very low contact resistance of 1.35x10(-7) Omega cm(2) for implanted Si atoms can be achieved for a dose of 1.15x10(15)/cm(2). This value is approximately equal with a value of only dose range of 1.00x10(15)/cm(2) and ion energy of 30keV.
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页码：121 / 123
页数：3
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