Spin Related Effect in Terahertz Photovoltaic Response of Si-MOSFETs

被引：0

作者：

Videlier, H. ^{[1
]}

Dyakonova, N. ^{[1
]}

Teppe, F. ^{[1
]}

Consejo, C. ^{[1
]}

Knap, W. ^{[1
]}

Lusakowski, J. ^{[2
]}

Tomaszewski, D. ^{[3
]}

Marczewski, J. ^{[3
]}

Grabiec, P. ^{[3
]}

机构：

[1] Univ Montpellier 2, GES UMR5650, F-34095 Montpellier, France

[2] Univ Warsaw, Inst Expt Phys, Warsaw, Poland

[3] Inst Elect Technol, PL-02668 Warsaw, Poland

来源：

PIERS 2011 MARRAKESH: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM | 2011年

关键词：

PLASMA-WAVE DETECTION; RADIATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on investigations of photovoltaic response of Si-MOSFETs subjected to Terahertz radiation in high magnetic fields. The MOSFETs develop a dc drain-to-source voltage that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bounded to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

引用

页码：1272 / 1274

页数：3

共 8 条

[1] Terahertz radiation detection by field effect transistor in magnetic field [J].

Boubanga-Tombet, S. ;

Sakowicz, M. ;

Coquillat, D. ;

Teppe, F. ;

Knap, W. ;

Dyakonov, M. I. ;

Karpierz, K. ;

Lusakowski, J. ;

Grynberg, M. .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[2] Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid [J].

Dyakonov, M ;

Shur, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (03) :380-387

[3] Terahertz response of InGaAs field effect transistors in quantizing magnetic fields [J].

Klimenko, O. A. ;

Mityagin, Yu. A. ;

Videlier, H. ;

Teppe, F. ;

Dyakonova, N. V. ;

Consejo, C. ;

Bollaert, S. ;

Murzin, V. N. ;

Knap, W. .

APPLIED PHYSICS LETTERS, 2010, 97 (02)

[4] Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors [J].

Knap, W ;

Teppe, F ;

Meziani, Y ;

Dyakonova, N ;

Lusakowski, J ;

Boeuf, F ;

Skotnicki, T ;

Maude, D ;

Rumyantsev, S ;

Shur, MS .

APPLIED PHYSICS LETTERS, 2004, 85 (04) :675-677

[5]

Lifshits M. B., 2009, PHYS REV B, V80

[6] A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology [J].

Ojefors, Erik ;

Pfeiffer, Ullrich R. ;

Lisauskas, Alvydas ;

Roskos, Hartmut G. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (07) :1968-1976

[7]

Stillman W., 2007, ELECT LETT, V43

[8] Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power [J].

Tauk, R. ;

Teppe, F. ;

Boubanga, S. ;

Coquillat, D. ;

Knap, W. ;

Meziani, Y. M. ;

Gallon, C. ;

Boeuf, F. ;

Skotnicki, T. ;

Fenouillet-Beranger, C. ;

Maude, D. K. ;

Rumyantsev, S. ;

Shur, M. S. .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

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