CIGS solar cell with MBE-grown ZnS buffer layer

被引：142

作者：

Islam, M. M. ^{[1
]}

Ishizuka, S. ^{[2
]}

Yamada, A. ^{[2
]}

Sakurai, K. ^{[2
]}

Niki, S. ^{[2
]}

Sakurai, T. ^{[1
]}

Akimoto, K. ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Solar cell; Cu(In Ga)Se-2; ZnS buffer layer; Double buffer layer; Efficiency; BAND-OFFSET;

D O I：

10.1016/j.solmat.2008.11.047

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu(In0.52Ga0.48)Se-2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the US buffer layer; however, by insertion of a 50 nm US layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the US buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：970 / 972

页数：3

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