Field emitter type CdTe radiation detector for X-ray imager

被引:0
作者
Sakata, Takuya [1 ]
Ikeda, Yoshiaki [1 ]
Shiozawa, Kazufumi [1 ]
Neo, Yoichiro [1 ]
Morii, Hisashi [1 ]
Aoki, Toru [1 ]
Mimura, Hidenori [1 ]
机构
[1] Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
来源
HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS AND PENETRATING RADIATION SYSTEMS VIII | 2006年 / 6319卷
关键词
imager; X-ray; CdTe; field emitter;
D O I
10.1117/12.680434
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We proposed a new addressing method that used a field emitter type electronic source for the radiation imaging detector. We enabled this device to operate room temperature by using Cadmium Telluride (CdTe) diode. In this addressing method, the energy of the electron from electronic source in each pixel was much uniformed and the electron beams can be focused within a micro meter diameter. Therefore, because this proposed device was lead out by field emitter, it was expected to achieve the super-high resolution X-ray imager. In this paper, we used the carbon nanoneedle field emitter, and the proposed device operation was confirmed by verifying principle about one pixel.
引用
收藏
页数:9
相关论文
共 10 条
  • [1] Development of energy discriminated CdTe imaging detector for hard X-ray
    Aoki, T
    Ishida, Y
    Sakashita, D
    Gnatyuk, VA
    Nakamura, A
    Tomita, Y
    Hatanaka, Y
    Temmyo, J
    [J]. HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VI, 2004, 5540 : 196 - 205
  • [2] ZnO diode fabricated by excimer-laser doping
    Aoki, T
    Hatanaka, Y
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3257 - 3258
  • [3] Aoki T, 2002, PHYS STATUS SOLIDI B, V229, P911, DOI 10.1002/1521-3951(200201)229:2<911::AID-PSSB911>3.0.CO
  • [4] 2-R
  • [5] Electron emission in intense electric fields
    Fowler, RH
    Nordheim, L
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) : 173 - 181
  • [6] Excimer laser doping techniques for II-VI semiconductors
    Hatanaka, Y
    Niraula, M
    Nakamura, A
    Aoki, T
    [J]. APPLIED SURFACE SCIENCE, 2001, 175 : 462 - 467
  • [8] OHNO R, 2004, IONIZING RAD, V30, P23
  • [9] SAITO Y, 2004, FIELD EMISSION DISPL
  • [10] TOMINAGA H, 2004, RAD APPL MEASUREMENT