Heat capacity and phonon mean free path of wurtzite GaN

被引:71
作者
Danilchenko, B. A.
Paszkiewicz, T.
Wolski, S.
Jezowski, A.
Plackowski, T.
机构
[1] Ukrainian Acad Sci, Inst Phys, UA-252650 Kiev, Ukraine
[2] Rzeszow Univ Technol, Chair Phys, PL-35959 Rzeszow, Poland
[3] Polish Acad Sci, Inst Low Temp & Struct Res, PL-50950 Wroclaw, Poland
关键词
D O I
10.1063/1.2335373
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report lattice specific heat of bulk hexagonal GaN measured by the heat flow method in the temperature range of 20-300 K and by the adiabatic method in the range of 5-70 K. The best fit with the accuracy of 3% was obtained for the temperature-independent Debye temperature Theta(D)=365 K and Einstein temperature Theta(E)=880 K. The authors relate these temperatures to the function of density of states. Using their results for heat conduction coefficient, they established in the temperature range of 10-100 K the explicit dependence of the phonon mean free path on temperature ...(ph)proportional to T-2. Above 100 K, there is an evidence of contribution of the Umklapp processes, which limits phonon free path at high temperatures. (c) 2006 American Institute of Physics.
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