Imaging of high-angle annular dark-field scanning transmission electron microscopy and observations of GaN-based violet laser diodes

被引：26
作者：
Shiojiri, M.
Saijo, H.
机构：
[1] Kanazawa Med Univ, Dept Anat, Ishikawa, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Kanazawa, Ishikawa, Japan
来源：
JOURNAL OF MICROSCOPY | 2006年 / 223卷
关键词：
GaN-based laser diode; high-angle annular dark-field scanning transmission electron microscopy; interference and coherence; multiple quantum wells; strained-layer superlattices;
D O I：
10.1111/j.1365-2818.2006.01613.x
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The first part of this paper is devoted to physics, to explain high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and to interpret why HAADF-STEM imaging is incoherent, instructing a strict definition of interference and coherence of electron waves. Next, we present our recent investigations of InGaN/GaN multiple quantum wells and AlGaN/GaN strained-layer superlattice claddings in GaN-based violet laser diodes, which have been performed by HAADF-STEM and high-resolution field-emission gun scanning electron microscopy.
引用
收藏
页码：172 / 178
页数：7
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