An analysis of the bias dependence of scattering parameters S11 and S22 of SiGe heterojunction bipolar transistors (HBTs)

被引：0

作者：

Lin, YS ^{[1
]}

Liang, HB ^{[1
]}

Lu, SS ^{[1
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

D O I：

10.1109/RFIC.2004.1320695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The anomalous dip in scattering parameter S-11 of SiGe heterojunction bipolar transistors (HBTs) is explained quantitatively for the first time. Our results show that for SiGe HBTs, the input impedance can be represented by a "shifted" series RC circuit at low frequencies and a "shifted" parallel RC circuit at high frequencies. The appearance of the anomalous dip of S-11 in a Smith chart is caused by this inherent ambivalent characteristic of the input impedance. It is found that under constant collector-emitter voltage (V-CE), an increase of base current (which corresponds to a decrease of r(pi) and an increase of g.) enhances the anomalous dip. In addition, the anomalous dip in S-11 of SiGe HBTs can also be interpreted in terms of poles and zeros.

引用

页码：611 / 614

页数：4

共 19 条

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Japanese Journal of Applied Physics, Part 2: Letters, 2004, 43 (6 B):
[2] An analysis of the anomalous dip in scattering parameter S11 of InGaP/GaAs heterojunction bipolar transistors (HBTs)
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[10] A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology
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