n-Si-Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p-n Homojunction in n-Si

被引：61

作者：

Erickson, Ann S. ^{[1
]}

Zohar, Arava ^{[1
]}

Cahen, David ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-7610001 Rehovot, Israel

来源：

ADVANCED ENERGY MATERIALS | 2014年 / 4卷 / 09期

关键词：

TRANSPORT; CELLS;

D O I：

10.1002/aenm.201301724

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页数：4

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