n-Si-Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p-n Homojunction in n-Si

被引：60
作者：
Erickson, Ann S. [1 ]
Zohar, Arava [1 ]
Cahen, David [1 ]
机构：
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-7610001 Rehovot, Israel
来源：
ADVANCED ENERGY MATERIALS | 2014年 / 4卷 / 09期
关键词：
TRANSPORT; CELLS;
D O I：
10.1002/aenm.201301724
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页数：4
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