The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

被引：25

作者：

Dimitrov, D ^{[1
]}

Shieh, HPD ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 3000, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 107卷 / 02期

关键词：

optical data storage; phase-change media; GeSbTe;

D O I：

10.1016/j.mseb.2003.10.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：107 / 112

页数：6

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