Effect of Chemical Doping on the Electronic Transport Properties of Tailoring Graphene Nanoribbons

被引:5
|
作者
Liu, Yang [1 ]
Xia, Cai-Juan [1 ]
Zhang, Bo-Qun [1 ]
Zhang, Ting-Ting [1 ]
Cui, Yan [1 ]
Hu, Zhen-Yang [1 ]
机构
[1] Xian Polytech Univ, Sch Sci, Xian 710048, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
NEGATIVE DIFFERENTIAL RESISTANCE; MOLECULAR JUNCTIONS; DOPED GRAPHENE; CONDUCTANCE; DEPENDENCE; RECTIFICATION; DEVICES;
D O I
10.1088/0256-307X/35/6/067101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic transport properties of a molecular junction based on doping tailoring armchair-type graphene nanoribbons(AGNRs) with different widths are investigated by applying the non-equilibrium Green's function formalism combined with first-principles density functional theory. The calculated results show that the width and doping play significant roles in the electronic transport properties of the molecular junction. A higher current can be obtained for the molecular junctions with the tailoring AGNRs with W = 11. Furthermore, the current of boron-doped tailoring AGNRs with widths W = 7 is nearly four times larger than that of the undoped one, which can be potentially useful for the design of high performance electronic devices.
引用
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页数:4
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